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Ordering number : ENA0270
2SC6064
2SC6064
Applications
*
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
* * * *
Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings 80 80 50 6 2 4 0.9 150 --55 to +150 Unit V V V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=100mA VCE=2V, IC=1.5A VCE=10V, IC=300mA VCB=10V, f=1MHz Ratings min typ max 1 1 200 40 420 9 MHz pF 560 Unit A A
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2805EA MS IM TB-00001910 No. A0270-1/4
2SC6064
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf IC=1A, IB=50mA IC=1A, IB=50mA IC=10A, IE=0A IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 80 50 6 30 330 40 Conditions Ratings min typ 170 0.9 max 340 1.2 Unit mV V V V V ns ns ns
Package Dimensions unit : mm 7519-003
6.9 1.45 2.5 1.0
Switching Time Test Circuit
IB1 INPUT PW=20s D.C.1%
4.5 1.0
IB2 RB
OUTPUT
50
VR + 100F + 470F
RL
1.0
1.0
0.6 0.5
4.0
VBE= --5V
VCC=25V
0.9
1
2
3
0.45
IC=10IB1= --10IB2=700mA
2.54
2.54
1 : Emitter 2 : Collector 3 : Base SANYO : NMP
2.0 1.8
IC -- VCE
30mA
2.0
IC -- VBE
VCE=2V
25mA 20mA
Collector Current, IC -- A
1.8 1.6 1.4 1.2 1.0 0.8 0.6
Collector Current, IC -- A
1.6 1.4
15mA 10mA
1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
5mA
3mA
2mA
C 25C
1mA
IB=0mA
1.6 1.8 2.0
0.2 0 0 0.2 0.4
0.6
Ta= 75
0.4
--25 C
0.8 1.0
1.2 IT10516
Collector-to-Emitter Voltage, VCE -- V
IT10515
Base-to-Emitter Voltage, VBE -- V
No. A0270-2/4
2SC6064
7 5
hFE -- IC
VCE=2V Gain-Bandwidth Product, f T -- MHz
7 5
f T -- IC
VCE=10V
Ta=75C
DC Current Gain, hFE
3
25C
3
--25C
2
2
100 7 5 0.01
100
7 5 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
7 5
IT10517 7
Cob -- VCB
Collector Current, IC -- A
IT10518
VCE(sat) -- IC
f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF
5 3 2 0.1 7 5 3 2
IC / IB=10
3 2
= Ta
10 7 5
2
0.01 7 5
C 5 --2 5C
75
C
3 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
3 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector-to-Base Voltage, VCB -- V
7 5
IT10519 3
VCE(sat) -- IC
Collector Current, IC -- A
IT10520
VBE(sat) -- IC
IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
3 2
0.1 7 5 3 2
1.0
Ta= --25C
75C 25C
= Ta
C 75
--2
C
C 5
7
5
25
0.01 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
3 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
3
IT10521 7 5 3
VBE(sat) -- IC
Collector Current, IC -- A
IT10522
ASO
IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
ICP=4A IC=2A
10
10
<10s
50
ms
10 0
s
2
0
s
Collector Current, IC -- A
1.0 7 5 3 2 0.1 7 5 3 2
0m
s
1m
s
DC
1.0
Ta= --25C
op
era
tio
n
7
25C
5
75C
3 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
0.01 0.1
Ta=25C Single pulse
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7
Collector Current, IC -- A
IT10523
Collector-to-Emitter Voltage, VCE -- V
IT10524
No. A0270-3/4
2SC6064
1.0 0.9
PC -- Ta
Collector Dissipation, PC -- W
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT10525
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice.
PS No. A0270-4/4

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